Renesas Electronics has introduced three new 650 V high-voltage gallium nitride (GaN) field-effect transistors (FETs) developed particularly for e-mobility charging stations, AI knowledge middle and server energy provides (together with 800 V HVDC architectures) and battery power storage. The fourth-generation plus (Gen IV Plus) units—named TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—are based mostly on the confirmed SuperGaN platform acquired by Renesas’ 2024 takeover of Transphorm, using depletion-mode (d-mode), normally-off GaN know-how.
These Gen IV Plus GaN elements provide decrease switching losses, smaller dimension, and elevated thermal effectivity in comparison with silicon and silicon carbide (SiC) counterparts. Particularly, the units use a die 14 p.c smaller than the earlier era, reaching a decreased on-resistance (R_DS(on)) of 30 milliohms (m?)—a 14 p.c enchancment—and providing a 20 p.c enchancment within the on-resistance output-capacitance product determine of benefit (FOM). The smaller die dimension instantly reduces output capacitance, enhancing effectivity and enabling greater energy density, finally leading to decrease general system prices.
Accessible in TOLT, TO-247, and TOLL packaging configurations, these GaN FETs give engineers broad flexibility for optimizing thermal administration and PCB layouts in energy methods starting from one to 10 kW, with greater scores achievable by paralleling configurations. Floor-mount choices (TOLL and TOLT) present bottom- or top-side thermal conduction paths, optimizing cooling and aiding easier system paralleling. The normal TO-247 bundle gives enhanced thermal dissipation appropriate for functions requiring greater energy dealing with.
Renesas emphasizes the units’ silicon-compatible gate drive inputs, permitting use of normal silicon MOSFET gate drivers relatively than specialised drivers usually required by enhancement-mode (e-mode) GaN alternate options. This structure lowers limitations to adoption, simplifies integration, and reduces complexity for engineers aiming to transition from silicon to GaN-based designs.
“The rollout of Gen IV Plus GaN units marks the primary main new product milestone since Renesas’ acquisition of Transphorm final yr,” mentioned Primit Parikh, Vice President of the GaN Enterprise Division at Renesas. “Future variations will mix the field-proven SuperGaN know-how with our drivers and controllers to ship full energy options. Whether or not used as standalone FETs or built-in into full system resolution designs with Renesas controllers or drivers, these units will present a transparent path to designing merchandise with greater energy density, decreased footprint and higher effectivity at a decrease complete system price.”
The brand new Gen IV Plus GaN FETs and related 4.2 kW Totem-Pole PFC GaN Analysis Platform (RDTTP4200W066A-KIT) are at present accessible for sampling and prototyping.
Supply: Renesas Electronics
