ROHM and Schaeffler have introduced the beginning of mass manufacturing for a brand new high-voltage inverter brick that includes ROHM’s silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) naked chips. Schaeffler says the system is designed for a significant Chinese language electrical EV producer.
The inverter brick helps battery voltages considerably higher than the everyday 800 V normal and may ship root imply sq. (RMS) currents as much as 650 A. These capabilities allow a extra compact however highly effective energy electronics module. Based on ROHM, the inverter brick’s modular and scalable design is central to its straightforward integration into quite a lot of inverter architectures, supporting fast deployment in automobile platforms utilizing so-called X-in-1 powertrain approaches. The brick integrates an influence module for pulse width modulation, a DC hyperlink capacitor, DC hyperlink and built-in cooling.
Moreover, it incorporates a DC increase perform, which permits automobiles with 800-volt techniques to cost at 400-volt charging stations whereas sustaining the upper charging pace related to 800-volt infrastructure.
ROHM notes that its fourth-generation SiC know-how considerably improves effectivity and efficiency for EVs, strengthening the function of silicon carbide energy semiconductors in fashionable automotive functions. The partnership between Schaeffler and ROHM, established in 2020, goals to safe improved capability and provide of energy-efficient SiC energy semiconductors.
Supply: ROHM
